Xiamen Powerway Advanced Material Co., Ltd offer LT-GaAs for THz or detector and other application.
2" LT-GaAs Wafer Specification:
Ф 50.8mm ± 1mm
1-2um or 2-3um
Marco Defect Density
≤ 5 cm-2
>108 Ohm-cm
Dislocation Density
Useable Surface Area
Single side polished
GaAs substrate
Other conditions:
1)    GaAs substrate should be undoped/semi-insulating with (100)orientation.
2)    Growth temperature: ~ 200-250 C
      Annealed for ~ 10 minutes at 600 C after growth

LT-GaAs Introduction:
Low-temperature grown GaAs is the most widely used material for the fabrication of photoconductive THz emitters or detectors. Its unique properties are good carrier mobility, high dark resistivity, and subpicosecond carrier lifetimes.
GaAs grown by molecular beam epitaxy (MBE) at temperatures lower than 300 °C (LT GaAs) presents a 1%–2% arsenic excess which depends on the growth temperature Tgand on the arsenic pressure during the deposition. As a result a high density of arsenic antisite defects AsGa is produced and forms a donor miniband close to the center of the band gap. The concentration of AsGa increases with decreasing Tg and can reach 1019–1020 cm-3, which leads to a decrease of the resistivity due to hopping conduction. The concentration of ionized donors AsGa+, which are responsible for the fast electron trapping, depends strongly on the concentration of acceptors (gallium vacancies). The as-grown samples are then usually thermally annealed: The excess arsenic precipitates into metallic clusters surrounded by depleted regions of As/GaAs barriers which allow one to recover the high resistivity. The role of the precipitates in the fast carrier recombination process is, however, not yet completely clear. Recently, attempts have been made also to dope LT GaAs during the MBE growth with compensating acceptors, namely with Be, in order to increase the number of AsGa+ : the trapping time reduction was observed for heavily doped samples.
LT-GaAs Test Report:
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THz Generation Process in LT-GaAs:
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