Xiamen Powerway Advanced Material Co.,Ltd offers CdZnTe for substrate and detector:
1.CdZnTe For epitaxial growth, HgCdTe:
CZT substrate size 20×20 +/-0.1mm or larger
CZT structure undoped twin-free
CZT thickness 1000 +/- 50
Zinc Distribution 4.5% or custom
"y" % wafer to wafer <4% +/- 1%
"y" % within wafer <4% +/- 0.5%
Orientation (211)B,(111)B
DCRC FWHM <= 50 arc.sec
Carrier concentration –
IR transmission % (2-20)um >60%
Precipitate size <5um
Precipitate density <1E4 cm-2
Etch pit density <=1E5 cm-2
Surface, B-face EPI ready
Surface, A-face Roughly polished
Surface roughness Ra<20A or custom
Te precipitate size <5um
Face identification A face
2.CdZnTe for radiation detection:
We offer CdZnTe material:As cut wafer/Polished wafer with contacts/ electrodes or PCB board or pixel or BNC.
Cadmium zinc telluride, (CdZnTe) or CZT, is a compound of cadmium, zinc and tellurium or, more strictly speaking, an alloy of cadmium telluride and zinc telluride. A direct bandgap semiconductor, it is used in a variety of applications, including radiation detectors, photorefractive gratings, electro-optic modulators, solar cells, and terahertz generation and detection. The band gap varies from approximately 1.4 to 2.2 eV, depending on composition.
Radiation detectors using CZT can operate in direct-conversion (or photoconductive) mode at room temperature, unlike some other materials (particularly germanium) which require liquid nitrogen cooling. Their relative advantages include high sensitivity for x-rays and gamma-rays, due to the high atomic numbers of Cd and Te, and better energy resolution than scintillator detectors. CZT can be formed into different shapes for different radiation-detecting applications, and a variety of electrode geometries, such as coplanar grids and small pixel detectors, have been developed to provide unipolar (electron-only) operation, thereby improving energy resolution the material has a high electro-optic coefficient and transparency in the mid-infrared region, making it a good modulator material for infrared lasers. The same properties make it useful for detection of terahertz waves.
An additional use is as a substrate material for the epitaxial growth of mercury cadmium telluride (HgCdTe), an infrared detector material. Cd0.96Zn0.04Te is almost perfectly lattice matched to LWIR HgCdTe (80% Hg, 20% Cd). However, it is difficult to grow large crystals of fixed composition.
Cd1-xZnxTe crystals, with x = 0.20, were grown by closed-ampoule directional solidification (Bridgman) technique with a controlled Cd overpressure. Both unseeded and seeded growths were performed with total material charges up to 400g. After the loading of starting CdZnTe material, a typical amount of 2g of Cd was also loaded inside a Cd reservoir basket, which was attached beneath the seal-off cup. The ampoule was sealed off under a vacuum below 1×10-5 Torr. The sealed ampoule was placed vertically inside a 4-zone Bridgman furnace – a Cd reservoir zone with a heat-pipe furnace liner on the top, followed by a hot zone, a booster heating zone and a cold zone at the bottom. The Cd-zone temperature settings ranged from 785 to 825oC. The growth process to consistently produce large grain, high crystalline quality CdZnTe was developed. Crystals of high electrical resistivity have been reproducibly obtained with In doping.
If you need more information about cdznte, please visit our website: http://www.powerwaywafer.com , send us email at [email protected].