2" GaN HEMT Epitaxial Wafers

 

We offer 2" GaN HEMT Wafers, the structure is as follows:

Structure(from top to bottom):

*undoped GaN cap(2~3nm)

AlxGa1-xN (18~40nm)

AlN(buffer layer)

un-doped GaN(2~3um)

Sapphire substrate

 

* We can use Si3N to replace GaN on the top, the adhesion is strong, it is coated by sputter or PECVD.

 

AlGaN/GaN HEMT Epi Wafer on sapphire/GaN

 

2" GaN HEMT Epitaxial Wafers

 

We offer 2" GaN HEMT Wafers, the structure is as follows:

Structure(from top to bottom):

*undoped GaN cap(2~3nm)

AlxGa1-xN (18~40nm)

AlN(buffer layer)

un-doped GaN(2~3um)

Sapphire substrate

 

* We can use Si3N to replace GaN on the top, the adhesion is strong, it is coated by sputter or PECVD.

 

AlGaN/GaN HEMT Epi Wafer on sapphire/GaN

 

Layer ID——-Layer Name———–Material——————–Al Content(%)———–Dopant——Thickness(nm)
0—————–Substrate—————GaN or Sapphire——–﹍—————————﹍————-﹍
1—————–Nucleation Layer—–Various,AlN————–100————————–DID————﹍
2—————–Buffer Layer————-GaN————————-0—————————-NID————1800
3—————–Spacer———————AlN————————100————————–NID————1
4—————–Schottky Barrier——–AlGaN——————–20 or 23 or 26———–NID————21
 
2"AlGaN/GaN on sapphire
 

For specification of AlGaN/GaN on sapphire template, please contact our sales department: [email protected].

 

Application: Used in blue laser diodes, ultraviolet LEDs (down to 250 nm), and AlGaN/GaN HEMTs device.

 

Explanation of AlGaN/Al/GaN HEMTs:

 

Nitride HEMTs are being intensively developed for high-power electronics in high-frequency amplification and power switching applications. Often high performance in DC operation is lost when the HEMT is switched – for example, the on-current collapses when the gate signal is pulsed. It is thought that such effects are related to charge trapping that masks the effect of the gate on current flow. Field-plates on the source and gate electrodes have been used to manipulate the electric field in the device, mitigating such current-collapse phenomena.

 

Related Classification:

 

algan/gan hemt, algan/gan hemt band diagram, algan/gan hemt based biosensor, algan gan hemt phd thesis, algan/gan hemt based liquid sensors, algan/gan hemt reliability, algan/gan hemt with 300-ghz, algan gan hemts an overview of device, algan gan hemt characterization, algan/gan hemts with an ingan-based back-barrier, aln/gan hemt, algan/aln/gan hemt, inaln/aln/gan hemt, aln passivation gan hemt.

 

Source:PAM-XIAMEN

 

If you need more information about GaN HEMT epitaxial wafer,please visit our website:http://www.powerwaywafer.com, send us email at [email protected] or [email protected].